INTRODUCTION

Definition: growing of single-crystal layers on top of a crystalline substrate

Name: επι (placed on) + ταξιζ (arrangement)

Purpose:

• making a defect free region for devices
• deposition of III-V materials for optics

Properties:

• zero-defect films
• excellent control of composition, doping, thickness

Applications:

• Si for advanced electronic devices
• GaAs for optoelectronic devices
• quantum well engineering