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My Courses:
Techonolgy of microelectronic devices
Substrate preparation
Film deposition
    Tutorials (6)
     Materials and material properties
     Physical Vapor Deposition
     Chemical Vapor Deposition
     Thermal growth
     Epitaxy
     Deposition and growth using liquid sources
Modifying the film properties
Lithography
Etching
Fabricating devices
Epitaxy tutorial

Modules

1. Theory of crystal growth
2. Various epitaxy methods

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MAIN STEPS

  • SiHxCl4-x precursors (chlorosilanes) are used for Si epitaxy
    • The larger the x, the lower the temperature (SiCl4 - 1150oC)

  • The main steps are as in the case of CVD:
      1. Gas-phase decomposition
      2. Transport to surface
      3. Adsorption
      4. Diffusion
      5. Decomposition
      6. Desorbtion of by-products

1. Theory of crystal growth
2. Various epitaxy methods

pages: previous | 1 2 [3] 4 5 6 7 8 | next
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