EPITAXY SYSTEM

• Similar to CVD reactors
• The heating of the wafers is realised by radiation or inductively heating the graphite susceptor
• Cleaning the wafer
  • before growth
  • is very important for a defect-free film
  • in-situ cleaning - by sputtering the wafer in Ar ambient; the surface however may be damaged
  • surface passivation with HF before film growth; Si-H bonds are created at the surface replacing the deletorious native oxide
    • hydrogen will be eliminated at 500oC in the reactor