COMPARISON

The main differences between the four most important epitaxy methods and the main problems are:

• LPE (Liquid phase epitaxy)
  • source: solution
  • poor control for thin layers, limited area
• VPE (Vapour phase epitaxy)
  • source: metal halide
  • thick layers are grown, no Al contained compound
• MBE (molecular beam epitaxy)
  • needs vacuum
  • problems with growing materials with high vapour pressure
• MOCVD (Metal organic CVD)
  • source: metalorganic compounds
  • AsH₃ is very toxic 

The picture below shows how the main deposition conditions (pressure and temperature) vary for each of the epitaxy type. For example, MBE requires vacuum, while VPE requires high temperatures. Each method will be discussed in detail in the next pages.