• APCVD - atmospheric pressure chemical vapor deposition
• LPCVD - low pressure chemical vapor deposition
• PECVD (HDP and RF) - plasma enhanced chemical vapor deposition (high density and radio-frequency)
• LECVD - laser enhanced chemical vapor deposition
• MOCVD - metal organic chemical vapor deposition

The first two use thermal energy to supply the energy required for the reactions. The next two are enhanced by another source of energy (plasma or laser).

The film properties (stress, composition , step coverage, uniformity, deposition rate) can be controlled by flows, pressure, power, temperature, etc. It is thus important to study how different reactor parameters influence the film properties.