Temperature: B/A and B depend on diffusion constant, thus they have an Arrenhius behaviour (the oxidation rate is higher at higher temperatures)
H2O presence: increases oxidation rate (thus the wet oxidation is much faster than the dry oxidation)
Explanation: HO diffuse easier than O
Films grown in wet ambient are porous, with a lot of H atoms (density is not so high, thus they are grown faster, but they have poor electrical properties, they don't insulate so well)
Example: 700 nm can be grown at 1000oC either in
Wet ambient for 6 h or in
Dry ambient for 60 h
Chlorine ambient:
Increases the growth rate
another effect is that the film properties are better because there are less impurities found in the oxide. Apparently the impurities form volatile components with Cl which are then pumped out.
Crystal orientation: Higher growth rate for (111) wafers than for (100) wafers. Diffusion of oxygen is faster for (111) wafers due the dependence of diffusivity coefficient on crystallographic orientation.
Pressure: the growth process depends on the concentration, thus on the partial pressure of O2
if a faster process is desired, the pressure can be increased over the atmospheric pressure
Substrate preparation
