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Ion implantation tutorial

Modules

1. Ion implantation

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DEFINITION

  • Purpose: doping layers
  • How: bombarding the layer with high-energy ions (1973 first commercial ion implanter)
  • Advantages over diffusion:
    • Large range of doses
    • Very good dopant control - by controlling the acceleration voltage
    • Low thermal budget (no need for high temperature as in the case of diffusion)
    • Burried profiles possible (dopant atoms will not be the surface, but lower)
  • Disadvantages:
    • Lattice damage
    • Limited throughput
    • High cost

 

1. Ion implantation

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