DEFINITION

• Purpose: doping layers
• How: bombarding the layer with high-energy ions (1973 first commercial ion implanter)
• Advantages over diffusion:
  • Large range of doses
  • Very good dopant control - by controlling the acceleration voltage
  • Low thermal budget (no need for high temperature as in the case of diffusion)
  • Burried profiles possible (dopant atoms will not be the surface, but lower)
• Disadvantages:
  • Lattice damage
  • Limited throughput
  • High cost