RANGE

• Factors that define the implantation process:
• R = total path of the incident ion
• R_p = RANGE = average distance from surface to the point where the ion stopped: , where S_n and S_e are the contributions of nucleus collisions and electron interactions, repectively

• DR_p = straggling (width of distribution of atoms) on x-axis: , where M_i is the ion mass and M_t the atom mass
• DR_t = transverse or lateral straggle on y-axis (DR_t > DR_p) ; due to the lateral straggle, the implanted region will be larger than the opening in the mask (see pictures below)

• Factors that influence implantation depth:
  • Mass (the lighter ions go deeper and have larger straggle)
  • Energy
• Depending on the projected range dimension, the implantation can be shallow (ions implanted close to the surface) or deep (ions implanted further away from the surface), as it can be seen in the picture below