Basic features:

• Sensitivity to in-plane accelerations
• Two piezoresistors, located on the cantilever upper surface symmetrically about the neutral plane,
  exposed to a contraction, and dilatation, respectively.
• If the silicon material used for sensor fabrication has the orientation <100>,
  the longitudinal and transversal piezoresistive coefficients are given as follows:

• N-type piezoresistors in a P-type silicon substrate were chosen for their high piezoelectric coefficient p₁₁
• Wheatstone bridge containing these piezoresistors gives the output voltage of:

• Accelerometer sensitivity equal to 0.7 mV/g/5V and the resonant frequency equal to 1.2 kHz was reported
• Silicon oil can be applied in order to increase the attenuation