Bulk anisotropic etching of silicon is a well-developed technology
Comparing to pressure sensors, accelerometers require more sophisticated anisotropic etching (double-sided etching)
Size of bulk micromachined accelerometers is typically a few millimetres
Surface micromachined capacitive accelerometers
Proof mass and its suspensions are fabricated by techniques using LPCVD or electroplating
Sacrificial spacing layer is removed after the structural film is deposited to release the structure from the substrate
Sensors are typically few hundreds of micrometers on each side, with the thickness of each layers determined by the deposition times of those layers
Performance of these devices depends critically on
Uniformity and mechanical properties of the deposited layers
Effects of residual stress in the films
Interface electronics are often integrated on the same chip because the sensing element is small and on only one side of the wafer
Different variations of the basic capacitive principles employ lateral, transversal, or torsional movement of either one movable electrode or of a set of interdigitated electrodes.