Rapid thermal annealing took place for 30 s at 950oC in N2 ambient.
The multiple quantum well structure contains three layers of InGaN and three layers of GaN
The thickness of the doped layers are: 2.5 microns of Si-doped GaN and 0.25 microns of Mg-doped GaN
The gas sources used for MOCVD were: trimethylindium (for In), trimethylgallium (for Ga), trimetylaluminium (for Al), ammonia (for N), silane diluted with hydrogen (for Si) and biscyclopentadienylmagnesium (for Mg)
Substrate preparation
