Metal-oxide-semiconductor (MOS) structure
Structure consisting of (from top to bottom)
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Metal
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SiO2 (insulator)
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p-type silicon
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Metal
Operation:
Voltage V ... negative
eox = e0 Kox ... permittivity of the SiO2 (~ 0.35 pF/cm)
Kox ... dielectric constant of the SiO2 (Kox ~ 3.9)
A ... area of the top electrode
l ... thickness of the SiO2 layer
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p-type Si layer between R and the bottom electrode behaves as a resistor
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Overall structure behaves as a lossy capacitor
Accumulation region
Voltage V ... positive
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Electric field created across the dioxide layer
repel positive charges (holes)
Region 'R' (depletion layer) contains a net negative space charge
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Very small positive voltage (V<<1V)
Structure behaves as a capacitor of the same magnitude as previously
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When the positive voltage is increased
Depletion layer widens
Charge in the depletion layer becomes greater
Effective value of l increases ... C decreases
Depletion region
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When the positive voltage is increased even further
l becomes a SiO2 thickness due to thermal electrons attracted to the depletion layer
Structure behaves as a capacitor of the same magnitude as previously
Inversion region