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MOS Transistor tutorial

Modules

1. Semiconductor Physics
2. MOS Structure
3. MOS Capacitor and Switch
4. Small-signal Operation of MOSFET
5. CMOS Technology Nodes

pages: [1] 2 3 4 | next

Metal-oxide-semiconductor (MOS) structure

Structure consisting of (from top to bottom)

  • Metal
  • SiO2 (insulator)
  • p-type silicon
  • Metal

Operation:

Voltage V ... negative

  • Electric field created across the dioxide layer
    attracts positive charges (holes) to the region 'R'

  • Negative charges stored in the top metal electrode

  • Structure behaves as a capacitor of magnitude

    

eox = e0 Kox  ... permittivity of the SiO2 (~ 0.35 pF/cm)
Kox               ... dielectric constant of the SiO2 (Kox ~ 3.9)
A                  ... area of the top electrode
l                    ... thickness of the SiO2 layer

  • p-type Si layer between R and the bottom electrode behaves as a resistor

  • Overall structure behaves as a lossy capacitor

Accumulation region

 

Voltage V ... positive

  • Electric field created across the dioxide layer
    repel positive charges (holes)
    Region 'R' (depletion layer) contains a net negative space charge

  • Very small positive voltage (V<<1V)
    Structure behaves as a capacitor of the same magnitude as previously

  • When the positive voltage is increased
    Depletion layer widens
    Charge in the depletion layer becomes greater
    Effective value of l increases ... C decreases

    Depletion region

  • When the positive voltage is increased even further
    l becomes a SiO2 thickness due to thermal electrons attracted to the depletion layer
    Structure behaves as a capacitor of the same magnitude as previously

Inversion region

1. Semiconductor Physics
2. MOS Structure
3. MOS Capacitor and Switch
4. Small-signal Operation of MOSFET
5. CMOS Technology Nodes

pages: [1] 2 3 4 | next

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