Metal-oxide-semiconductor (MOS) structure
Structure consisting of (from top to bottom)
- 
Metal 
- 
SiO2 (insulator) 
- 
p-type silicon 
- 
Metal 

Operation:
Voltage V ... negative
 
     
eox = e0 Kox  ... permittivity of the SiO2 (~ 0.35 pF/cm)
Kox               ... dielectric constant of the SiO2 (Kox ~ 3.9)
A                  ... area of the top electrode
l                    ... thickness of the SiO2 layer
- 
p-type Si layer between R and the bottom electrode behaves as a resistor 
 
 
 
- 
Overall structure behaves as a lossy capacitor 
 
Accumulation region
 
Voltage V ... positive
- 
Electric field created across the dioxide layer 
 repel positive charges (holes)
 Region 'R' (depletion layer) contains a net negative space charge
 
 
- 
Very small positive voltage (V<<1V)
 Structure behaves as a capacitor of the same magnitude as previously
 
 
- 
When the positive voltage is increased
 Depletion layer widens
 Charge in the depletion layer becomes greater
 Effective value of l increases ... C decreases
 
 Depletion region
 
 
- 
When the positive voltage is increased even further
 l becomes a SiO2 thickness due to thermal electrons attracted to the depletion layer
 Structure behaves as a capacitor of the same magnitude as previously
 
 
Inversion region